Today's article comes from the IET journal of Circuits, Devices & Systems. The authors are Min et al., from Ajou University, in South Korea. In this paper they're exploring two-transistor (2T) DRAM. They're not inventing it here, they're systematically stress-testing and refining it, and seeing how well it might work for PIM architectures.
DOI: 10.1049/cds2/4669819
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